%0 Journal Article
%T Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films<br>Sn掺杂对(In0.95-xSnxFe0.05)2O3薄膜的结构、电学及磁特性的影响
%A Xing Pengfei
%A Chen Yanxue
%A Sun Shaohua
%A <br>邢鹏飞
%A 陈延学
%A 孙少华
%J 半导体学报
%D 2013
%I 
%X Room-temperature ferromagnetism was observed in (In0.95-xSnxFe0.05)2O3 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.
%K pulsed laser deposition
%K room-temperature ferromagnetism
%K (In0
%K 95-xSnxFe0
%K 05)2O3 films
%K carrier concentration
%K bound magnetic polaron model<br>脉冲激光沉积，室温铁磁性，(In0.95-xSnxFe0.05)2O3薄膜，载流子浓度，束缚磁极化子模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A4530113100DD72280F&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=0B39A22176CE99FB&sid=B2C70C1A5C24DBED&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=24