%0 Journal Article
%T Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating<br>立式MOCVD反应室感应加热温度场的有限元分析*
%A Li Zhiming
%A Xu Shengrui
%A Zhang Jincheng
%A Chang Yongming
%A Ni Jingyu
%A Zhou Xiaowei
%A Hao Yue
%A <br>李志明
%A 许晟瑞
%A 张进成
%A 常永明
%A 倪金玉
%A 周小伟
%A 郝跃
%J 半导体学报
%D 2009
%I 
%X The temperature ?eld in the vertical metalorganic chemical vapor deposition (MOCVD) reactor chamber used for the growth of GaN materials is studied using the ?nite element analysis method (FEM). The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.
%K MOCVD
%K ?nite element
%K temperature
%K suspector<br>MOCVD
%K 有限元
%K 温度
%K 基座
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=13C9AE873B44F16D71829B731EC325FE&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=B7E353DF1D0F2E2A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0