%0 Journal Article
%T A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs<br>一种新型的基于pMOS和nMOS阈值电压差的CMOS电压基准源
%A Kong Ming
%A Guo Jianmin
%A Zhang Ke
%A Li Wenhong
%A <br>孔明
%A 郭健民
%A 张科
%A 李文宏
%J 半导体学报
%D 2007
%I 
%X 提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度.该电路经过Chartered 0.35mm标准CMOS工艺成功流片,芯片面积为0.022mm2.测试结果表明:输出平均电压在室温下与仿真结果的绝对误差为6mV,在0～100℃范围内温度系数为180ppm/℃,电源调整率为±1.1%.该基准应用于自适应功率管驱动器中.
%K MOS-only
%K voltage reference
%K threshold voltage
%K temperature coefficient
%K line regulation<br>纯MOS结构
%K 电压基准
%K 阈值电压
%K 温度系数
%K 线性调整率
%K MOS-only
%K voltage
%K reference
%K threshold
%K voltage
%K temperature
%K coefficient
%K line
%K regulation
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6F20EBB19275D609CF&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&sid=BA5D64D6F29EA80F&eid=617DEAEB2884AFC7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9