%0 Journal Article
%T Low-Temperature Growth and Photoluminescence of SnO2 Nanowires<br>SnO2纳米线的低温生长及光致发光研究
%A Wang Bing
%A Xu Ping
%A Yang Guowei
%A <br>王冰
%A 徐平
%A 杨国伟
%J 半导体学报
%D 2008
%I 
%X SnO2 nanowires with the diameter of 25 nm have been synthesized at the temperature of 550 oC by Au-Ag catalyst assisted thermal evaporation of SnO powders. The room-temperature photoluminescence spectra (PL) of the prepared nanowires are measured. Among four peaks of PL, the peak of 418 nm is the newly observed, which is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at the low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. The chemical reactions of the low temperature and low concentration of the vaporized species are suggested to be responsible for the thinner size of SnO2 nanowires.
%K crystal growth
%K nanomaterials
%K morphology
%K photoluminescence<br>晶体生长
%K 纳米材料
%K 形貌
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C4017CF760E59A533C27DAA0F7ACD08D&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=D553E127EB64CF12&eid=DCB1FFC992CAE3A0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=36