%0 Journal Article
%T Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method<br>VGF法生长的低位错掺Si-GaAs单晶的缺陷和性质
%A Yu Huiyong
%A Zhao Youwen
%A Zhan Rong
%A Gao Yongliang
%A Hui Feng
%A <br>于会永
%A 赵有文
%A 占荣
%A 高永亮
%A 惠峰
%J 半导体学报
%D 2008
%I 
%X Micro-defects and properties of Si-doped,low resistivity GaAs single crystal grown by the vertical gradient freeze (VGF) method are studied and compared with undoped semi-insulating GaAs grown by VGF and liquid encapsulated Czochralski-grown (LEC) methods.Using the A-B etching microscopy method,micro-precipitated defects in the two materials are compared and their formation mechanism is analyzed.Lattice occupation of Si and B atoms and their complex defects are investigated by photoluminescence spectroscopy.Hall measurement results indicate that there is a strong Si self-compensation in the low resistive Si-doped VGF-GaAs single crystal,resulting in a reduction of n-type doping efficiency.As a result,a high initial doping concentration of Si is used in the process of VGF growth of n-type GaAs,and a large amount of impurity precipitate is formed.This situation is enhanced when a high concentration of B in the VGF grown GaAs exists.An approach to reduce defects and increase doping efficiency is discussed.
%K VGF
%K GaAs
%K micro-defect
%K single crystal<br>垂直温度梯度凝固法
%K GaAs
%K 微缺陷
%K 单晶
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=145412A98B6E8573D374C40450047F76&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=AE8A2F3A47BD276F&eid=F7E64A4EB9091FB5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=22