%0 Journal Article
%T Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses<br>不同淀积厚度InAs量子点的喇曼散射
%A Zhang Guanjie
%A Xu Bo
%A Chen Yonghai
%A Yao Jianghong
%A Lin Yaowang
%A Shu Yongchun
%A Pi Biao
%A Xing Xiaodong
%A Liu Rubin
%A Shu Qiang
%A Wang Zhanguo
%A Xu Jingjun
%A <br>张冠杰
%A 徐波
%A 陈涌海
%A 姚江宏
%A 林耀望
%A 舒永春
%A 皮彪
%A 邢晓东
%A 刘如彬
%A 舒强
%A 王占国
%A 许京军
%J 半导体学报
%D 2006
%I 
%X The Raman scattering of InAs/GaAs self-assembled quantum dots(QDs) with different InAs thicknesses is investigated.The vibrational mode,which can be assigned to QD phonons,is observed.Analysis indicates that strain is the most important factor that influences the InAs QD frequency.As the InAs deposition thickness L increases,the InAs-like LO mode frequency decreases,which we attribute to the relaxation of the strain in the QD layer.In another sample with an InAlAs strain buffer layer,the AlAs-like LO mode shows a blue shift as L increases.This also supports the proposed strain relaxation process in QDs.
%K quantum dots
%K Raman scattering
%K strain effect
%K confinement effect<br>量子点
%K 喇曼散射
%K 应变效应
%K 限制效应
%K 淀积厚度
%K InAs
%K 量子点
%K 喇曼散射
%K Deposition
%K Different
%K Quantum
%K Dots
%K Scattering
%K 释放过程
%K 应变缓冲层
%K 蓝移
%K 大发生
%K 声子频率
%K AlAs
%K 样品
%K 红移
%K 应变释放
%K 显示
%K 实验
%K 因素
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=128E262066DC17CC&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=B31275AF3241DB2D&sid=85873A559EE29055&eid=C368DFEE1EA2C91D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16