%0 Journal Article
%T Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress<br>直接隧穿应力下超薄栅氧MOS器件退化
%A Hu Shigang
%A Hao Yue
%A Ma Xiaohu
%A Cao Yanrong
%A Chen Chi
%A Wu Xiaofeng
%A <br>胡仕刚
%A 郝跃
%A 马晓华
%A 曹艳荣
%A 陈炽
%A 吴笑峰
%J 半导体学报
%D 2008
%I 
%X The degradation of device parameters and the degradation of the stress induced leakage current (SILC) of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1.4nm gate oxides.Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling (DT) stresses.A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.
%K threshold voltage
%K interface traps
%K direct tunneling
%K SILC<br>阈值电压
%K 界面陷阱
%K 直接隧穿
%K 应力感应漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A1833F34264680312BF9F3140454E514&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=7B6F8FF0F7C4CB44&eid=F4E0DF030AC3A199&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=26