%0 Journal Article
%T Growth and microstructure properties of microcrystalline silicon films depositedusing jet-ICPCVD<br>Jet-ICPCVD法制备微晶硅薄膜及其微结构特征研究
%A Zuo Zewen
%A Guan Wentian
%A Xin Yu
%A L Jin
%A Wang Junzhuan
%A Pu Lin
%A Shi Yi
%A Zheng Youdou School of Electronic Science
%A Engineering
%A Key Laboratory of Photonic
%A Electronic Materials
%A Nanjing University
%A Nanjing
%A China School of Physical Science
%A Technology
%A Suzhou University
%A Suzhou
%A China
%A <br>左则文
%A 管文田
%A 辛煜
%A 闾锦
%A 王军转
%A 濮林
%A 施毅
%A 郑有炓
%J 半导体学报
%D 2011
%I 
%X Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinit...
%K microcrystalline silicon
%K jet-ICPCVD
%K high rate
%K convective transfer
%K crystallinity<br>微晶硅
%K Jet-ICPCVD
%K 高速率，对流输运
%K 晶化率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0FA1FF47852CF1988F60554E3635917&yid=9377ED8094509821&vid=9971A5E270697F23&iid=38B194292C032A66&sid=7AEE0A43F2BBD0B1&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0