%0 Journal Article
%T A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process<br>粗调和细调相结合的标准CMOS低噪声环形压控振荡器
%A Gao Haijun
%A Sun Lingling
%A Kuang Xiaofei
%A Lou Liheng
%A <br>高海军
%A 孙玲玲
%A 邝小飞
%A 楼立恒
%J 半导体学报
%D 2012
%I 
%X A low phase noise wideband ring oscillator with coarse and fine tuning techniques implemented in standard 65nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and switched capacitor array is introduced for lower VCO-gain to suppress this effect. Two-dimensional stacked MOM-capacitor with high density was adopted as switched capacitor to make the proposed ring VCO compatible with standard CMOS process. The designed ring VCO exhibits output frequency from 480MHz to 1100MHz, resulting a tuning range of 78%, and the measured phase noise is -120dBc/Hz@1MHz at 495MHz output. The VCO core consumes 3.84mW under 1.2V supply voltage, the corresponding FOM is -169dBc/Hz.
%K ring oscillator
%K switched capacitor array
%K phase noise
%K MOM-capacitor
%K standard CMOS<br>CMOS工艺
%K 环形振荡器
%K 低相位噪声
%K 微调技术
%K 标准
%K 开关电容器
%K 环形压控振荡器
%K 频率调制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6054DFDC987AA8B25433899CD7CF4588&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=DF92D298D3FF1E6E&sid=985A2658B048ECC7&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9