%0 Journal Article
%T Double humps and radiation effects of SOI NMOSFET<br>SOINMOSFET的双峰及辐射效应研究
%A Cui Jiangwei
%A Yu Xuefeng
%A Ren Diyuan
%A He Chengf
%A Gao Bo
%A Li Ming
%A Lu Jian
%A <br>崔江维
%A 余学峰
%A 任迪远
%A 何承发
%A 高博
%A 李明
%A 卢健
%J 半导体学报
%D 2011
%I 
%X Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.
%K SOI
%K radiation
%K double humps<br>绝缘体上长硅，辐射，双峰效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A76AFB92ED24559D08A&yid=9377ED8094509821&vid=9971A5E270697F23&iid=B31275AF3241DB2D&sid=1F88074D537BEA38&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0