%0 Journal Article
%T Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode<br>4H-SiC结型势垒肖特基二极管的制作与特性研究
%A 陈丰平
%A 张玉明
%A 吕红亮
%A 张义门
%A 郭辉
%A 郭鑫
%J 半导体学报
%D 2011
%I 
%X 4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work.
%K 4H-SiC
%K junction barrier Schottky
%K field guard ring<br>4H-碳化硅，结型势垒肖特基二极管，场限环
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A76F2D753B20FF2A57C&yid=9377ED8094509821&vid=9971A5E270697F23&iid=B31275AF3241DB2D&sid=67F2070E7C6DECBA&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0