%0 Journal Article
%T Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field<br>外加太赫兹场与磁场作用下的高电子迁移率晶体管电流特性
%A Wang Limin
%A Cao Juncheng
%A <br>王立敏
%A 曹俊诚
%J 半导体学报
%D 2008
%I 
%X When a high-electron mobility transistor (HEMT) is driven by a terahertz (THz) field and magnetic field,plasma oscillation appears in the channel of the HEMT.We have investigated the effect of the THz field and magnetic field on the current characteristics of the HEMTs.The results show that the peaks of the responsivities of the HEMT exhibit blueshift as the magnetic field increases.We may tune the frequencies of the plasma oscillation by changing the magnetic field.
%K high-electron mobility transistor
%K terahertz field
%K magnetic field
%K responsivity<br>高电子迁移率晶体管
%K 太赫兹场
%K 磁场
%K 响应率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=70A86E6E5B41746F54C2C33888E4B5D4&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=A621DEC64CBC4DA1&eid=D98C4F25072149E5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15