%0 Journal Article
%T Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure<br>运用两步曝光法减小纳米间隔纳米柱制备中的邻近效应
%A Zhang Yang
%A Zhang Renping
%A Han Weihu
%A Liu Jian
%A Yang Xiang
%A Wang Ying
%A Li Chian Chiu
%A Yang Fuhua
%A <br>张杨
%A 张仁平
%A 韩伟华
%A 刘剑
%A 杨香
%A 王颖
%A 李千秋
%A 杨富华
%J 半导体学报
%D 2009
%I 
%X A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate.
%K nanopillars
%K electron-beam lithography
%K negative PMMA
%K proximity effect<br>纳米柱
%K 电子束曝光
%K 负性PMMA
%K 邻近效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2833A4675BA56B71337CF022C433BA5A&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=ADFE0425A9DEACD5&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0