%0 Journal Article
%T Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP<br>基于空间控制的ICP量子阱混杂技术
%A Zhao Jianyi
%A Guo Jian
%A Huang Xiaodong
%A Zhou Ning
%A Liu Wen
%A <br>赵建宜
%A 郭剑
%A 黄晓东
%A 周宁
%A 刘文
%J 半导体学报
%D 2012
%I 
%X This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology. The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios. With an optimal condition including ICP-RIE etching depth, SiO2 deposition, and RTA process, five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample. The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
%K inductively coupled plasma
%K photonic integrated circuits
%K quantum wells
%K quantum well intermixing<br>感应耦合等离子
%K 光子集成回路
%K 量子阱
%K 量子阱混杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=12FAD7BF88E1F42AB17AC30D6B935347&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=F3090AE9B60B7ED1&sid=AE59DB288169B2A8&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9