%0 Journal Article
%T Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition<br>基于共沉积技术的AgTCNQ的有机双稳态器件
%A Tu Deyu
%A Ji Zhuoyu
%A Shang Liwei
%A Liu Ming
%A Wang Congshun
%A Hu Wenping
%A <br>涂德钰
%A 姬濯宇
%A 商立伟
%A 刘明
%A 王丛舜
%A 胡文平
%J 半导体学报
%D 2008
%I 
%X The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD).A reversible and reproducible memory switching property,caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film,was observed in the organic bistable devices.The positive threshold voltage from the high impedance state to the low impedance was about 3.8~5V,with the reverse phenomenon occurring at a negative voltage of -3.5~-4.4V,lower than that with a CuTCNQ active layer.The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.
%K organic electronics
%K bistable switching
%K crossbar memory<br>有机电子学
%K 双稳态开关
%K 交叉存储器
%K organic
%K electronics
%K bistable
%K switching
%K crossbar
%K memory
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F9669F78EB1347B97D19F2616D815088&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=771152D1ADC1C0EB&eid=318E4CC20AED4940&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=30