%0 Journal Article
%T A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs<br>全耗尽SOI MOSFETs阈值电压和电势分布的温度模型
%A Tang Junxiong
%A Tang Minghu
%A Yang Feng
%A Zhang Junjie
%A Zhou Yichun
%A Zheng Xuejun
%A <br>唐俊雄
%A 唐明华
%A 杨锋
%A 张俊杰
%A 周益春
%A 郑学军
%J 半导体学报
%D 2008
%I 
%X A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson's equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.
%K fully depleted silicon-on-insulator MOSFETs
%K potential
%K threshold voltage<br>全耗尽SOI
%K MOSFETs
%K 电势
%K 阈值电压
%K fully
%K depleted
%K silicon-on-insulator
%K MOSFETs
%K potential
%K threshold
%K voltage
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BEFBFE8D38FA94E7933F4E0338150571&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=94E7F66E6C42FA23&eid=2A3781E88AB1776F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13