%0 Journal Article
%T Capacitance and conductance dispersion in AlGaN/GaN heterostructure<br>题目：AlGaN/GaN异质结电容与电导色散研究
%A Yan Dawei
%A Wang Fuxue
%A Zhu Zhaomin
%A Cheng Jianmin
%A Gu Xiaofeng
%A <br>Yan Dawei
%A Wang Fuxue
%A Zhu Zhaomin
%A Cheng Jianmin
%A Gu Xiaofeng
%J 半导体学报
%D 2013
%I 
%X 本文研究Al0.27Ga0.73N/GaN异质结的电容与电导频率色散机制。测量结果表明,色散现象主要发生在频率大于100K Hz和界面沟道未耗尽时,表示肖特基金属下的势垒层中的极化电场与该现象密切相关。根据Schottky-Read-Hall模型,传统的陷阱机制不能够解释测量结果,本文采用压电极化应力弛豫模型分析器件的散射行为。通过对电容数据进行拟合,获得弛豫特征时间与压电极化电荷密度分别为～10-8 s and ～5.26×1012 cm-2,结果与测量的电导数据和理论预测值一致。
%K capacitance dispersion
%K AlGaN/GaN heterostructure
%K strain relaxation model<br>电容与电导色散
%K AlGaN/GaN异质结
%K 应力弛豫模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45A30CBD7BACC40CF2&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=CA4FD0336C81A37A&sid=C6A8A868801B1E20&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10