%0 Journal Article
%T Nano-WO3 film modified macro-porous silicon (MPS) gas sensor<br>纳米氧化钨薄膜改性的大孔硅气敏传感器
%A Sun Peng
%A Hu Ming
%A Li Mingda
%A Ma Shuangyun
%A <br>孙鹏
%A 胡明
%A 李明达
%A 马双云
%J 半导体学报
%D 2012
%I 
%X We prepared macro-porous silicon (MPS) by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon. Then, nano-WO3 films were deposited on MPS layers by DC facing target reactive magnetron sputtering. The morphologies of the MPS and WO3/MPS samples were investigated by using a field emission scanning electron microscope. The crystallization of WO3 and the valence of the W in the WO3/MPS sample were characterized by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The gas sensing properties of MPS and WO3/MPS gas sensors were thoroughly measured at room temperature. It can be concluded that: the WO3/MPS gas sensor shows the gas sensing properties of a P-type semiconductor gas sensor. The WO3/MPS gas sensor exhibits good recovery characteristics and repeatability to 1 ppm NO2. The addition of WO3 can enhance the sensitivity of MPS to NO2. The long-term stability of a WO3/MPS gas sensor is better than that of an MPS gas sensor. The sensitivity of the WO3/MPS gas sensor to NO2 is higher than that to NH3 and C2H5OH. The selectivity of the MPS to NO2 is modified by deposited nano-WO3 film.
%K MPS
%K WO3/MPS gas sensor
%K gas sensing properties
%K room temperature<br>大孔硅，氧化钨/大孔硅气敏传感器，气敏特性，室温
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9FDF75195748F95D593E179B97927399&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=94C357A881DFC066&sid=51690F0ED21E38FF&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=27