%0 Journal Article
%T An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate<br>增强型AlGaN/GaN 槽栅HEMT
%A Wang Chong
%A Zhang Jinfeng
%A Quan Si
%A Hao Yue
%A Zhang Jincheng
%A Ma Xiaohua
%A <br>王冲
%A 张金凤
%A 全思
%A 郝跃
%A 张进城
%A 马晓华
%J 半导体学报
%D 2008
%I 
%X 成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT. 栅长1.2μm，源漏间距4μm，槽深15nm的器件在3V栅压下饱和电流达到332mA/mm，最大跨导为221mS/mm，阈值电压为0.57V, ft和fmax分别为5.2和9.3GHz. 比较刻蚀前后的肖特基I-V特性，证实了槽栅刻蚀过程中非有意淀积介质层的存在. 深入研究了增强型器件亚阈特性和频率特性.
%K high electron mobility transistors
%K AlGaN/GaN
%K recessed-gate
%K threshold voltage<br>高电子迁移率晶体管
%K AlGaN/GaN
%K 槽栅
%K 阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5849A246266695A4040D4940CFC2A6C7&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=BFDA25D5ECAB4246&eid=380BA99738E9DB23&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8