%0 Journal Article
%T A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current<br>一种全新的基于小电流过趋热效应的峰值结温电学测试方法
%A Zhu Yangjun
%A Miao Qinghai
%A Zhang Xinghua
%A Han Zhengsheng
%A <br>朱阳军
%A 苗庆海
%A 张兴华
%A 韩郑生
%J 半导体学报
%D 2009
%I 
%X It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA (thermal spectrum analysis method). Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.
%K peak junction temperature
%K multi-step current
%K excessive thermotaxis effect of low current
%K power transistor<br>峰值结温
%K 阶梯电流
%K 小电流过趋热效应
%K 功率器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2BB74479177672EE607F123404CCA0B5&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=9CF7A0430CBB2DFD&sid=B069BBF730E28AFC&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0