%0 Journal Article
%T Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates<br>氨化Si基Ga2O3/Co薄膜合成GaN纳米线及其表征
%A Qin Lixi
%A Xue Chengshan
%A Zhuang Huizhao
%A Yang Zhaozhu
%A Chen Jinhua
%A Li Hong
%A <br>秦丽霞
%A 薛成山
%A 庄惠照
%A 杨兆柱
%A 陈金华
%A 李红
%J 半导体学报
%D 2008
%I 
%X 采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950"C下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.
%K nanorods
%K crystal growth
%K scanning and transmission electron microscopy<br>纳米棒
%K 晶体生长
%K 扫描和透射电子显微镜
%K nanorods
%K crystal
%K growth
%K scanning
%K and
%K transmission
%K electron
%K microscopy
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F0BBC94F5C1B0B5F48C9F173D71A33C6&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=AA27B676BFCAA4BE&eid=527AEE9F3446633A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=21