%0 Journal Article
%T Modeling of High-Voltage LDMOS for PDP Driver ICs<br>PDP驱动芯片中高压LDMOS建模
%A Li Haisong
%A Sun Weifeng
%A Yi Yangbo
%A Shi Longxing
%A <br>李海松
%A 孙伟锋
%A 易扬波
%A 时龙兴
%J 半导体学报
%D 2008
%I 
%X A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs.The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects,voltage-dependent drift resistance,self-heating effects,and Miller capacitance.In contrast to most physical or sub-circuit models,the proposed model not only provides precise simulated results,but also brings a very fast modeling procedure.Furthermore,the model also can be embedded in a commercial SPICE simulator easily.The simulation results using the presented models agree well with the measured ones and the error is less than 5%.
%K model
%K LDMOS
%K sub-circuit
%K PDP driver ICs<br>模型
%K LDMOS
%K 子电路
%K PDP驱动芯片
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A079691C6037486900357596C9FDE11B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=6C93B78AD20D3369&eid=2166C11758CAF1DD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13