%0 Journal Article
%T Effect of Annealing Temperature on ZnO Thin Film Grown on a TiO2 Buffer Layer<br>退火温度对生长在TiO2缓冲层上的ZnO薄膜的影响
%A Xu Linhu
%A Li Xiangyin
%A Shi Linxing
%A Shen Hua
%A <br>徐林华
%A 李相银
%A 史林兴
%A 沈华
%J 半导体学报
%D 2008
%I 
%X ZnO thin films were deposited on TiO2 buffer layers by electron beam evaporation.The effect of annealing temperature on crystalline quality and photoluminescence of the films was studied.The structural characteristics of the as-deposited and annealed films were investigated by an X-ray diffractometer and a scanning probe microscope.The photoluminescence was studied by fluorophotometer.The analysis results show that all the annealed ZnO thin films grown on TiO2 buffer layers are preferentially oriented along...
%K ZnO thin film
%K TiO2 buffer layer
%K crystalline quality
%K photoluminescence<br>ZnO薄膜
%K TiO2缓冲层
%K 晶化质量
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A4A2AD273F77CC2950EFA2CA70AFC16F&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&sid=F53A2717BDB04D52&eid=5370399DC954B911&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=39