%0 Journal Article
%T A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs<br>Two-dimensional Analytical Model Based Comparative Threshold Performance Analysis of SOI-SON MOSFET
%A Sanjoy De
%A Saptarsi Ghosh
%A N Basanta Singh
%A A K De
%A Subir Kumar Sarkar
%A <br>Sanjoy De
%A Saptarsi Ghosh
%A N Basanta Singh
%A A K De
%A Subir Kumar Sarkar
%J 半导体学报
%D 2011
%I 
%X A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.
%K silicon-on-insulator
%K silicon-on-nothing
%K Poisson＇s equation
%K short channel effects
%K threshold voltage roll-off
%K subthreshold slope<br>MOSFET
%K SOI结构
%K 阈值电压
%K 性能分析
%K 二维分析
%K 模型基
%K 儿子
%K 基础
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0C0AC355ED3D7747EF2C11062CD9342&yid=9377ED8094509821&vid=9971A5E270697F23&iid=F3090AE9B60B7ED1&sid=0EB5D613F74DC53B&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=24