%0 Journal Article
%T Analysis of the subthreshold characteristics of vertical tunneling field effect transistors<br>垂直隧穿场效应晶体管的亚阈值特性分析
%A Han Zhongfang
%A Ru Guoping
%A Ruan Gang
%A <br>Han Zhongfang
%A Ru Guoping
%A Ruan Gang
%J 半导体学报
%D 2013
%I 
%X Subthreshold characteristics of vertical tunneling field effect transistors (VTFETs) with an n+-pocket in the p+-source are studied by simulating the transfer characteristics with a commercial device simulator. Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations. Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET. This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region, depending on the turn-on sequence of these two components. To our knowledge, this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid. Our results indicate that the design of the n+ pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.
%K tunneling field effect transistor
%K metal-oxide-semiconductor field effect transistor
%K subthreshold swing<br>隧穿场效应晶体管
%K 金属-氧化物-半导体场效应晶体管
%K 亚阈值摆幅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45767538335DF7EFE5&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=CA4FD0336C81A37A&sid=7B7F448A16ECB4F6&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16