%0 Journal Article
%T A simulation study on a novel trench SJ IGBT<br>Trench SJ IGBT 的仿真研究
%A Wang Bo
%A Tan Jingfei
%A Zhang Wenliang
%A Chu Weili
%A Zhu Yangjun
%A <br>王波
%A 谈景飞
%A 张文亮
%A 褚为利
%A 朱阳军
%J 半导体学报
%D 2012
%I 
%X An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.
%K IGBT
%K superjunction
%K SJBT
%K charge imbalance
%K on-state voltage
%K breakdown voltage
%K turn-off loss<br>绝缘栅双极晶体管
%K 超结
%K 超结双极晶体管
%K 电荷不平衡
%K 饱和导通压降
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FB49BF2377AF40E98C0F83155BED4FE0&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=708DD6B15D2464E8&sid=BB4005F94361E3EE&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=18