%0 Journal Article
%T Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals<br>包含双层半导体和金属纳米晶MOS电容的存储特性
%A Ni Henan
%A Wu Liangcai
%A Song Zhitang
%A Hui Chun
%A <br>倪鹤南
%A 吴良才
%A 宋志棠
%A 惠春
%J 半导体学报
%D 2009
%I 
%X An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.
%K nonvolatile memory
%K nanocrystal memory
%K MOS capacitor<br>非挥发性存储器
%K 纳米晶存储器
%K MOS
%K 电容
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F928E6A46ACB19F9734BB1958B7B708B&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=679AD9DE7508E1CC&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0