%0 Journal Article
%T Temperature: a critical parameter affecting the optical properties of porous silicon<br>温度：影响多孔硅光学特性的一个关键参数
%A Long Yongfu
%A Ge Jin
%A Ding Xunmin
%A Hou Xiaoyuan
%A <br>龙永福
%A 葛进
%A 丁训民
%A 侯晓远
%J 半导体学报
%D 2009
%I 
%X The optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature range from-40to 50_C have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The dependence of the optical parameters, such as the refractive index n and the optical thickness (nd) of PS samples, on the etching temperature has been analyzed in detail. As the etching temperature decreases, n decreases, indicating a higher porosity, and the physical thickness of PS samples also de-creases. Meanwhile, the reflectance spectra exhibit a more intense interference band and the interfaces are smoother. In addition, the intensity of the PL emission spectra is dramatically increased.
%K porous silicon
%K temperature
%K optical thickness
%K photoluminescence<br>多孔硅，温度，光学厚度，光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AA9AD6CE882C7374D9CBAFE8278E3146&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=56D2365DB322F0CB&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0