%0 Journal Article
%T Fabrication of 4H-SiC MSM Photodiode Linear Arrays<br>一维阵列MSM 4H-SiC紫外光电探测器的研制
%A Yang Weifeng
%A Cai Jiafa
%A Zhang Feng
%A Liu Zhuguang
%A Wu Zhengyun
%A <br>杨伟锋
%A 蔡加法
%A 张峰
%A 刘著光
%A 吕英
%A 吴正云
%J 半导体学报
%D 2008
%I 
%X Metal-semiconductor-metal (MSM) photodetector linear arrays of 40 pixels based on 4H-SiC,in which nickel Schottky contacts are used,are designed,fabricated,and characterized.Current-voltage and spectral responsivity measurements are carried out at room temperature.The linear arrays show uniform performances,including responsibility,breakdown voltage,and low leakage current.The breakdown voltage of the unit is beyond 100V.The detector shows a peak responsivity of about 0.09A/W,a dark current smaller than 5pA at 20V,and a displayed peak response wavelength at 290nm.The ratio of responsivity at 290nm to that of at 400nm is more than 5000,implying that the photodetector has an improved visible blind performance.
%K 4H-SiC
%K metal-semiconductor-metal
%K linear arrays
%K responsivity<br>4H-SiC
%K 金属-半导体-金属
%K 一维阵列
%K 响应度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8D01F2E9857F674D015FD4486859F395&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=18F040DBCB74FFF9&eid=03EE8EDD44A3D4BE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15