%0 Journal Article
%T A Transition Region Study of SiO2/4H-SiC Interface by ADXPS<br>SiO2/4H-SiC(0001)界面过渡区的ADXPS研究
%A Wang Dejun
%A Zhao Liang
%A Zhu Qiaozhi
%A Ma Jikai
%A Chen Suhua
%A Wang Haibo
%A <br>王德君
%A 赵亮
%A 朱巧智
%A 马继开
%A 陈素华
%A 王海波
%J 半导体学报
%D 2008
%I 
%X This article reports on the study of the transition region of a SiO2/4H-SiC interface prepared by dry oxidation using ADXPS.The study contains interface composition,component distribution and so on.We prepared the samples with oxidation thicknesses between 1nm and 1.5nm based on controlling the speed that the dilute HF acid etches SiO2 grown on SiC.The standard samples were adopted to assist in analysis.The results indicate that the SiO2/4H-SiC interface simultaneously contains Si1+,Si2+,and Si3+.The ADXPS ...
%K SiO2/SiC interface
%K 4H-SiC
%K ADXPS
%K interface state density
%K defect<br>SiO2/SiC界面
%K 4H-SiC
%K ADXPS
%K 界面态
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=16633690A75A47AC25F8DFFC25566F69&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=ABE2D40B2765724E&eid=BFB3B49B74E638B4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=28