%0 Journal Article
%T SRAM standby leakage decoupling analysis for different leakage reduction techniques<br>静态存储器保持状态下几种不同漏电流压制技术的漏电流拆分式分析
%A Dong Qing
%A Lin Yinyin
%A <br>董庆
%A 林殷茵
%J 半导体学报
%D 2013
%I 
%X SRAM standby leakage reduction plays a pivotal role in minimizing the power consumption of application processors. Generally, four kinds of techniques are often utilized for SRAM standby leakage reduction: Vdd lowering (VDDL), Vss rising (VSSR), BL floating (BLF) and reversing body bias (RBB). In this paper, we comprehensively analyze and compare the reduction effects of these techniques on different kinds of leakage. It is disclosed that the performance of these techniques depends on the leakage composition of the SRAM cell and temperature. This has been verified on a 65 nm SRAM test macro.
%K SRAM
%K standby power
%K leakage reduction<br>静态存储器
%K 漏电流
%K 漏电流压制技术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DFEDDF274BE1BF8013B28713261DB879&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=E158A972A605785F&sid=4F8A5BC66AA21A03&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10