%0 Journal Article
%T A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure<br>一种用于高压电平位移电路结构的准三维模拟方法
%A Liu Jizhi
%A Chen Xingbi
%A <br>刘继芝
%A 陈星弼
%J 半导体学报
%D 2009
%I 
%X A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.
%K quasi-3D
%K 3D
%K device simulation
%K high-voltage level-shifting<br>准三维
%K 三维
%K 器件模拟
%K 高压电平位移
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=394404DA7D1C9738B9BC39165871E0DF&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=59906B3B2830C2C5&sid=29939E8999CF6C4B&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0