%0 Journal Article
%T Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors<br>基于纳米多晶硅薄膜晶体管磁传感器制作工艺和特性
%A Zhao Xiaofeng
%A Wen Dianzhong
%A Zhuang Cuicui
%A Cao Jingya
%A Wang Zhiqiang
%A <br>赵晓锋
%A 温殿忠
%A 庄萃萃
%A 曹靖雅
%A 王志强
%J 半导体学报
%D 2013
%I 
%X 给出一种具有霍尔输出端纳米多晶硅薄膜晶体管磁传感器。采用CMOS工艺在<100>晶向高阻单晶硅衬底上实现具有霍尔输出端纳米多晶硅薄膜晶体管磁传感器制作，该传感器以厚度为90 nm纳米多晶硅薄膜和纳米多晶硅薄膜与高阻单晶硅衬底之间形成的异质结界面作为敏感层。实验结果给出在VDS =5.0 V时，基于纳米多晶硅薄膜晶体管磁传感器在沟道长宽比为160μm/80μm, 320μm/80μm和480μm/80μm时磁灵敏度分别为78 mV/T, 55 mV/T 和34 mV/T。在相同条件下，磁灵敏度高于以单晶硅作为敏感层的Hall磁传感器灵敏度。
%K nano-polysilicon TFT
%K magnetic field sensor
%K CMOS technology
%K magnetic sensitivity
%K heterojunction interfaces<br>纳米多晶硅薄膜晶体管
%K 磁传感器
%K CMOS工艺
%K 磁灵敏度
%K 异质结界面
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45CC1D101C76049708&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=38B194292C032A66&sid=DA429FCF8127D04E&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14