%0 Journal Article
%T Negative bias temperature instability induced single event transient pulse narrowing and broadening<br>负偏置温度不稳定性导致单粒子瞬态脉冲的压缩与展宽
%A Chen Jianjun
%A Chen Shuming
%A Liang Bin
%A Liu Biwei
%A <br>陈建军
%A 陈书明
%A 梁斌
%A 刘必慰
%J 半导体学报
%D 2010
%I 
%X The effect of negative bias temperature instability (NBTI) on a single event transient (SET) has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.
%K negative bias temperature instability
%K single event transient
%K narrowing and broadening<br>负偏置温度不稳定性（NBTI）
%K 单粒子瞬态脉冲（SET）
%K 压缩与展宽
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EB921843969EEE1BBD70CBF147DF8674&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=0710AF5CE49A447C&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0