%0 Journal Article
%T 1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
%A Niu Zhichuan
%A Ni Haiqiao
%A Fang Zhidan
%A Gong Zheng
%A Zhang Shiyong
%A Wu Donghai
%A Sun Zheng
%A Zhao Huan
%A Peng Hongling
%A Han Qin
%A Wu Ronghan
%J 半导体学报
%D 2006
%I 
%X 报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器. 室温带边发射峰的半高宽小于35meV，表明量子点大小比较均匀. 原子力显微镜图像显示，量子点密度可以控制在(1～7)E10cm-2范围之内，而面密度处于4E10cm-2时有良好的光致发光谱性能. 含有三到五层1.3μm量子点的激光器成功实现了室温连续激射.
%K 量子点
%K 砷化铟
%K 激光器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8C5A13B75845D35D&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=38B194292C032A66&sid=BE5DBC360CD4FFB9&eid=8CE1095CD639AEF4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=23