%0 Journal Article
%T An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier<br>一种应用于InGaP/GaAs HBT射频功率放大器的在片温度补偿电路
%A Li Chengzhan
%A Chen Zhijian
%A Huang Jiwei
%A Wang Yongping
%A Ma Chuanhui
%A Yang Hanbing
%A Liao Yinghao
%A Zhou Yong
%A Liu Bin
%A <br>李诚瞻
%A 陈志坚
%A 黄继伟
%A 王永平
%A 马传辉
%A 杨寒冰
%A 廖英豪
%A 周勇
%A 刘斌
%J 半导体学报
%D 2011
%I 
%X A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The tempera...
%K GaAs HBT
%K power amplifier
%K temperature compensation
%K on chip<br>GaAs
%K HBT
%K 功率放大器
%K 温度补偿电路
%K 在片
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=734DF75479CF991A459B3C383D05266D&yid=9377ED8094509821&vid=9971A5E270697F23&iid=38B194292C032A66&sid=E087E0F9EC029F70&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0