%0 Journal Article
%T Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
%A Ma Long
%A Huang Yinglong
%A Zhang Yang
%A Wang Liangchen
%A Yang Fuhua
%A Zeng Yiping
%A <br>Ma Long
%A Huang Yinglong
%A Zhang Yang
%A Wang Liangchen
%A Yang Fuhu
%A Zeng Yiping
%J 半导体学报
%D 2006
%I 
%X A high performance AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD) on InP substrate is fabricated by inductively coupled plasma etching.This RTD has a peak-to-valley current ratio (PVCR) of 7.57 and a peak current density Jp=39.08kA/cm2 under forward bias at room temperature.Under reverse bias,the corresponding values are 7.93 and 34.56kA/cm2.A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire.The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
%K resonant tunneling diode
%K inductively coupled plasma
%K current-voltage characteristics
%K high frequency<br>共振隧穿二极管
%K 感应耦合等离子体
%K I-V特性
%K 高频
%K resonant
%K tunneling
%K diode
%K inductively
%K coupled
%K plasma
%K current-voltage
%K characteristics
%K high
%K frequency
%K 高速电路
%K 共振隧穿二极管
%K 制作
%K AlAs
%K Fabrication
%K Applications
%K Circuit
%K InP
%K Substrate
%K Resonant
%K Tunneling
%K Diode
%K characteristics
%K structure
%K effect
%K probe
%K wire
%K cutoff
%K frequency
%K values
%K reverse
%K forward
%K bias
%K room
%K temperature
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0672B3457422379C&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=B31275AF3241DB2D&sid=4986C0B14AED27B4&eid=CFC2B32D03D9F610&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=7