%0 Journal Article
%T Hot carrier effects of SOI NMOS<br>SOI工艺下NMOS管的热载流子效应研究
%A Chen Jianjun
%A Chen Shuming
%A Liang Bin
%A Liu Biwei
%A Liu Zheng
%A Teng Zheqian
%A <br>陈建军
%A 陈书明
%A 梁斌
%A 刘必慰
%A 刘征
%A 滕浙乾
%J 半导体学报
%D 2010
%I 
%X Hot carrier effect(HCE) is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation ...
%K annular NMOS
%K two-edged NMOS
%K hot carrier effects
%K reaction diffusion model<br>环形栅NMOS
%K 双边栅NMOS
%K 热载流子效应
%K 反应扩散模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3BE449BF1F18DB85EDB058A78BB25429&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=8352FD18A3B6FAE3&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0