%0 Journal Article
%T Multiple Node Upset in SEU Hardened Storage Cells<br>SEU 加固存储单元中的多节点翻转
%A Liu Biwei
%A Hao Yue
%A Chen Shuming
%A <br>刘必慰
%A 郝跃
%A 陈书明
%J 半导体学报
%D 2008
%I 
%X We study the problem of multiple node upset (MNU) using three-dimensional device simulation.The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.We compare the MNU with multiple bit upset (MBU), and find that their characteristics are different.Methods to avoid MNU are also discussed.
%K multiple node upset
%K hardened cell
%K charge collection<br>多节点翻转
%K 加固单元
%K 电荷收集
%K multiple
%K node
%K upset
%K hardened
%K cell
%K charge
%K collection
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E207871CBCF9195846264F4F5387903D&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=5B5B75F4854B8331&eid=1D01216AD76577EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13