%0 Journal Article
%T Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films<br>Fabrication and Characterizations of the Semiconductors ZnO:Co thin films
%A Said Benramache
%A Boubaker Benhaoua
%A Foued Chabane
%A <br>Said Benramache
%A Boubaker Benhaou
%A Foued Chabane
%J 半导体学报
%D 2012
%I 
%X Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.
%K ZnO:Co films
%K transparent conducting films
%K ultrasonic spray deposition
%K substrate temperature
%K band gap energy<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=12438348CF4272B087CE2A910F77229F&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=9CF7A0430CBB2DFD&sid=C8F6693C9D6C253B&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=21