%0 Journal Article
%T Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs<br>双栅双应变沟道全耗尽SOI MOSFETs的特性分析
%A Gao Yong
%A Sun Liwei
%A Yang Yuan
%A Liu Jing
%A <br>高勇
%A 孙立伟
%A 杨媛
%A 刘静
%J 半导体学报
%D 2008
%I 
%X A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.The electrical characteristics of this device with the effective gate length scaled down to 25nm are simulated.When the Ge content reaches 30%,by the adoption of a single-gate(SG) control mechanism,the drive currents are improved by 43% and 67%,respectively,for the strained-Si n-MOSFET and the strained-SiGe p-MOSFET over their unstrained counterparts.By adopting double-gate(DG) control mechanisms,the simila...
%K double-gate
%K dual-strained-channel
%K short channel effects<br>双栅
%K 双应变沟道
%K 短沟道效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5C07A4AB98A40F220B07894C0F9D3CD1&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=302684F6FB4B24FF&eid=5957D6E0A50D26B5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12