%0 Journal Article
%T 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress<br>DC应力n-MOSFET热载流子退化的1/f噪声特性
%A Liu Yu''an
%A Yu Xiaoguang
%A <br>刘宇安
%A 余晓光
%J 半导体学报
%D 2008
%I 
%X 研究了DC应力n.MOSFET热载流子退化的Sfγ噪声参量.提出了用噪声参数和Sfγ表征高、中、低三种栅应力下n-MOSFET抗热载流子损伤能力的方法.进行了高、中、低三种栅压DC应力下热载流子退化实验.实验结果和本文模型符合较好.
%K n-MOSFET
%K 热载流子效应
%K 1/fγ噪声
%K n-MOSFET
%K hot
%K carrier
%K 1/fγ
%K noise
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BAED1C4965EFAD39FC193A07C7D79AD9&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=08DDB398556FE547&eid=A1CD1DC26CC35415&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6