%0 Journal Article
%T Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS<br>阶梯栅氧结构的NLDMOS热载流子效应研究
%A Han Yan
%A Zhang Bin
%A Ding Koubao
%A Zhang Shifeng
%A Han Chenggong
%A Hu Jiaxian
%A Zhu Dazhong
%A <br>韩雁
%A 张斌
%A 丁扣宝
%A 张世峰
%A 韩成功
%A 胡佳贤
%A 朱大中
%J 半导体学报
%D 2010
%I 
%X The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS (SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift (NDD) region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS (UG-NLDMOS) transistors.
%K SG-NLDMOS
%K Ron degradation
%K charge-pumping
%K interface state
%K positive oxide-trapped charge<br>SG-NLDMOS
%K 导通电阻退化
%K 电荷泵
%K 界面态
%K 氧化层陷阱正电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D07FBBCAF1FBF2E44DA2473E27A9FB65&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=96A6D7C3E2F5FB3A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0