%0 Journal Article
%T Various Effective Resist Diffusion Lengths Methodology for OPC Model Calibration<br>基于多光刻胶有效扩散长度的光学临近效应修正模型校准方法
%A Zhu Liang
%A Wenren Qingqing
%A Yan Jiang
%A Gu Yili
%A Yang Steve
%A <br>朱亮
%A 闻人青青
%A 阎江
%A 顾以理
%A 杨华岳
%J 半导体学报
%D 2008
%I 
%X A various effective resist diffusion lengths methodology for OPC model calibration is proposed,which considers the discrepancy of effective resist diffusion lengths between 1D and 2D patterns.An important step of this methodology is to set up a new calibration flow that lets 1D and 2D patterns have the same optical parameters but different effective diffusion lengths.Furthermore,a design for manufacturing (DFM) interaction is suggested in the calibration flow of the proposed model.From the CD errors of fitting results and the comparison between simulated contours and SEM images,it is found that the various effective resist diffusion lengths model calibration methodology results in a more accurate and stable model.
%K OPC
%K DFM
%K DAIM
%K EPE
%K CAR
%K MEF<br>光学临近效应修正
%K 可制造性设计
%K 扩散光学影像模型
%K 边缘位置误差
%K 化学放大光刻胶
%K 掩膜误差因子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=478D6885D2A718C518EA75CEB41C1D39&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=59906B3B2830C2C5&sid=E7CA8C097E344C0D&eid=9FFFA3A269242559&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11