%0 Journal Article
%T Effect of copper slurry on polishing characteristics<br>铜抛光液对片内非均匀性影响的研究
%A Hu Yi
%A Liu Yuling
%A Liu Xiaoyan
%A Wang Liran
%A He Yangang
%A <br>胡轶
%A 刘玉岭
%A 刘效岩
%A 王立冉
%A 何彦刚
%J 半导体学报
%D 2011
%I 
%X The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate (RR) on the polishing characteristics of copper. The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0.065. The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.
%K copper slurry
%K chemical mechanical planarization
%K WIWNU<br>光特性
%K 表面粗糙度测量
%K 化学机械研磨
%K 铜
%K 氧化剂浓度
%K 磨料浓度
%K 工作压力
%K 抛光液
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0C0AC355ED3D77463AB4DDBD67B13D2&yid=9377ED8094509821&vid=9971A5E270697F23&iid=708DD6B15D2464E8&sid=ADFE0425A9DEACD5&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7