%0 Journal Article
%T New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs<br>一种新的Halo掺杂圆柱围栅MOSFET阈值电压解析模型
%A Li Cong
%A Zhuang Yiqi
%A Han Ru
%A <br>李聪
%A 庄奕琪
%A 韩茹
%J 半导体学报
%D 2011
%I 
%X Using exact solution of two-dimensional Poisson equation in cylindrical coordinates, a new analytical model comprising electrostatic potential, electric field and threshold voltage for halo-doped surrounding-gate MOSFETs is developed. It is found that new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of silicon channel is much larger than that of the oxide. It is revealed that moderate halo doping concentration, thin gate oxide thickness and small silicon channel radius are needed to improve threshold voltage characteristics. The derived analytical model agrees well with three-dimensional numerical device simulator ISE.
%K MOSFETs
%K cylindrical surrounding-gate
%K threshold voltage
%K analytical model
%K halo<br>MOSFETs
%K 圆柱围栅，阈值电压，解析模型，halo
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B70A235664D163BA73111A5BF9873D2E&yid=9377ED8094509821&vid=9971A5E270697F23&iid=DF92D298D3FF1E6E&sid=97E7F3E54CC665FE&eid=5D311CA918CA9A03&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0