%0 Journal Article
%T Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition<br>金属有机化学气相沉积法生长纯闪锌矿结构P型砷化镓纳米线
%A Li Ran
%A Huang Hui
%A Ren Xiaomin
%A Guo Jingwei
%A Liu Xiaolong
%A Huang Yongqing
%A Cai Shiwei
%A <br>李然
%A 黄辉
%A 任晓敏
%A 郭经纬
%A 刘小龙
%A 黄永清
%A 蔡世伟
%J 半导体学报
%D 2011
%I 
%X Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In the high II/III ratio range (II/III>9.1%), there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III = 0.2%, the doping concentration is about 8 × 1018 cm-3.
%K GaAs nanowire
%K p-type doping
%K metal organic chemical vapor position
%K zinc-blende structure<br>金属有机物化学气相沉积
%K 闪锌矿结构
%K GaAs
%K p型掺杂
%K 纳米线
%K 有机金属
%K 生长
%K 金催化剂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A76DFDF15F9061C67F1&yid=9377ED8094509821&vid=9971A5E270697F23&iid=94C357A881DFC066&sid=4EF90875E206E5A9&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0