%0 Journal Article
%T Comparison of Electron Transmittances and Tunneling Currents in an Anisotropic TiNx/HfO2/SiO2/p-Si(100) Metal-Oxide-Semiconductor (MOS) Capacitor Calculated Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method
%A Fatimah A. Noor
%A Mikrajuddin Abdullah
%A Sukirno
%A Khairurrijal
%J 半导体学报
%D 2010
%I 
%K Airy
%K wavefunction
%K Anisotropic
%K MOS
%K Exponential
%K wavefunction
%K Transmittance
%K Tunneling
%K Current.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B61EF70A861EB25037F45DBC571A4395&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=7BA533019CBD9DDA&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0