%0 Journal Article
%T Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment<br>F等离子体处理增强型及耗尽型AlGaN/GaN HEMT集成的D触发器
%A Xie Yuanbin
%A Quan Si
%A Ma Xiaohu
%A Zhang Jincheng
%A Li Qingmin
%A Hao Yue
%A <br>谢元斌
%A 全思
%A 马晓华
%A 张进城
%A 李青民
%A 郝跃
%J 半导体学报
%D 2011
%I 
%X Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.
%K AlGaN/GaN
%K fluorine plasma treatment
%K inverter
%K NAND gate
%K D flip-flop<br>AlGaN/GaN
%K F等离子体处理，反向器，与非门，D触发器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CB13B1D439D6A763908DEA536F99404&yid=9377ED8094509821&vid=9971A5E270697F23&iid=B31275AF3241DB2D&sid=52ED053E9A589DE5&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0