%0 Journal Article
%T Effect of High-Gate-Voltage Stress on the Reverse Gated-Diode Current in LDD nMOSFET''s<br>高栅压电子注入损伤对产生电流的影响
%A Chen Haifeng
%A Hao Yue
%A Ma Xiaohua
%A <br>陈海峰
%A 郝跃
%A 马晓华
%J 半导体学报
%D 2008
%I 
%X The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied.We find that the generation current peak decreases as the stress time increases.We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias,lowering the maximal generation rate.The density of the effective trapped electrons affecting the effective drain bias is calculated with our model.
%K generation current
%K high gate voltage stress
%K trapped electron<br>产生电流
%K 高栅压应力
%K 陷落电子EEACC:2530
%K 2560R
%K generation
%K current
%K high
%K gate
%K voltage
%K stress
%K trapped
%K electron
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6CCA367AA72E259FDBE6E3E6FF6A091B&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=94C357A881DFC066&sid=4AA5FA7F666BDD0A&eid=2D207DE75533FA7E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10